• DocumentCode
    1757856
  • Title

    Rare-Earth-Free Direct-Emitting Light-Emitting Diodes for Solid-State Lighting

  • Author

    Wetzel, Christian ; Detchprohm, Theeradetch

  • Author_Institution
    Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    50
  • Issue
    2
  • fYear
    2014
  • fDate
    March-April 2014
  • Firstpage
    1469
  • Lastpage
    1477
  • Abstract
    The advent of a wide-bandgap GaN p-n junction has enabled highly efficient blue light-emitting diodes (LEDs) in GaInN/GaN heteroepitaxy. The system also enables a much wider range of emission wavelengths. We summarize progress in epitaxial materials development of green, yellow, and orange direct-emitting LEDs that bypass the steps of external phosphor conversion to achieve higher stability, efficiency, and higher overall color rendering quality for wider adoption of one of the widest power savings resources so far identified.
  • Keywords
    LED lamps; gallium compounds; indium compounds; lighting; rare earth metals; GaInN-GaN; color rendering quality; emission wavelengths; epitaxial materials development; external phosphor conversion; green direct-emitting LED; heteroepitaxy; orange direct-emitting LED; power savings resources; rare-earth-free direct-emitting light-emitting diodes; solid-state lighting; wide-bandgap p-n junction; yellow direct-emitting LED; Color; Gallium nitride; Light emitting diodes; Phosphors; Photonics; Solid state lighting; III-V semiconductor materials; LED lamps; light emitting diodes; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/TIA.2013.2279192
  • Filename
    6584750