DocumentCode
1757856
Title
Rare-Earth-Free Direct-Emitting Light-Emitting Diodes for Solid-State Lighting
Author
Wetzel, Christian ; Detchprohm, Theeradetch
Author_Institution
Rensselaer Polytech. Inst., Troy, NY, USA
Volume
50
Issue
2
fYear
2014
fDate
March-April 2014
Firstpage
1469
Lastpage
1477
Abstract
The advent of a wide-bandgap GaN p-n junction has enabled highly efficient blue light-emitting diodes (LEDs) in GaInN/GaN heteroepitaxy. The system also enables a much wider range of emission wavelengths. We summarize progress in epitaxial materials development of green, yellow, and orange direct-emitting LEDs that bypass the steps of external phosphor conversion to achieve higher stability, efficiency, and higher overall color rendering quality for wider adoption of one of the widest power savings resources so far identified.
Keywords
LED lamps; gallium compounds; indium compounds; lighting; rare earth metals; GaInN-GaN; color rendering quality; emission wavelengths; epitaxial materials development; external phosphor conversion; green direct-emitting LED; heteroepitaxy; orange direct-emitting LED; power savings resources; rare-earth-free direct-emitting light-emitting diodes; solid-state lighting; wide-bandgap p-n junction; yellow direct-emitting LED; Color; Gallium nitride; Light emitting diodes; Phosphors; Photonics; Solid state lighting; III-V semiconductor materials; LED lamps; light emitting diodes; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2013.2279192
Filename
6584750
Link To Document