DocumentCode
1757862
Title
Stress- and temperature-compensated orientations for thickness-shear langasite resonators for high-temperature and high-pressure environment
Author
Patel, Mihir S. ; Sinha, Bikash K.
Author_Institution
Math. & Modeling Dept., Schlumberger-Doll Res., Cambridge, MA, USA
Volume
62
Issue
6
fYear
2015
fDate
42156
Firstpage
1095
Lastpage
1103
Abstract
This paper describes an exhaustive study of the variations of the mean force sensitivity coefficients in the entire region of crystalline langasite (LGS). We also study the variation of temperature coefficients in the entire region of the crystalline LGS and its isomorphs. The computational results have been obtained from a procedure that has been successfully employed in the study of the planar and temperature stress-induced frequency shifts in thickness-mode resonators. Both the fast and slow thickness-shear modes have been studied. Among other things, the loci of orientations with zero stress and temperature coefficients of frequency have been identified for LGS.
Keywords
crystal resonators; gallium compounds; lanthanum compounds; pressure measurement; pressure sensors; temperature measurement; temperature sensors; La3Ga5SiO14; crystalline langasite; high-pressure environment; high-temperature environment; isomorphs; mean force sensitivity coefficients; orientation loci; planar frequency shifts; pressure sensors; stress-compensated orientation; temperature coefficients of frequency; temperature sensors; temperature stress-induced frequency shifts; temperature-compensated orientation; thickness-shear langasite resonators; Dielectric constant; Force; Resonant frequency; Stress; Temperature; Temperature measurement; Temperature sensors;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2014.006857
Filename
7119990
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