In-Depth Electromagnetic Analysis of ESD Protection for Advanced CMOS Technology During Fast Transient and High-Current Surge

The purpose of this paper is to present the main results of an electrostatic discharge (ESD) protection for advanced CMOS technology with electromagnetic (EM) field effect and Lorentz Force (LF) contributions during fast transient and high-current surge. To address this goal, the first step is building a tool to simulate fast transient conditions with all participating physical mechanisms included. The relevant equations describing these mechanisms are: 1) the charge transport equations and 2) the Maxwell equations to describe the EM fields. The LF is also included using an extended formulation of the current-continuity equations. An integrated approach is followed to simulate the full structure (metal connections + silicon device) during the ESD surge and to compare the results between ElectroMagnetic Lorentz Force simulations and transmission line pulse measurements. Obviously, in general, this paper and tool can be used to address electromagnetic compatibility topics and more.