DocumentCode :
1758044
Title :
Development of an Ultralong Ultralow n-Loop for Wire Bonding
Author :
Fuliang Wang ; Yun Chen ; Lei Han
Author_Institution :
State Key Lab. of High Performance Complex Manuf., Central South Univ., Changsha, China
Volume :
28
Issue :
1
fYear :
2015
fDate :
Feb. 2015
Firstpage :
50
Lastpage :
54
Abstract :
In this paper, we describe an innovative method to form an ultralong ultralow loop for wire bonding. A resister was used to form kinks and simplify the capillary trace, which yielded a loop-like “n”-shape with two kinks immediately above the first and second bonds that can support the entire long-span loop. A 3-D finite element model was developed to simulate the n-loop formation, and the loop profiles of an n-loop, M-loop, and standard loop were compared. In this paper, we show that this novel n-loop can almost halve the looping time compared to that for the M-loop; and the n-loop can avoid wire sag for a 5000-μ m-long span. Furthermore, the loop height and wire verticality near the second bond can be modified by regulating the horizontal and vertical positions of the resister.
Keywords :
finite element analysis; lead bonding; resistors; wires (electric); 3D finite element model; capillary trace; distance 5000 mum; horizontal position regulation; loop-like n-shape; m-loop profile; resister; standard loop profile; ultralong ultralow n-loop development; vertical position regulation; wire bonding; wire sag; Bonding; Gold; Microelectronics; Packaging; Three-dimensional displays; Wires; Thermosonic wire bonding; n-loop; ultra-long ultra-low loop; ultralong ultralow (ULUL) loop;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2014.2381219
Filename :
6985725
Link To Document :
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