DocumentCode :
1758114
Title :
Nonvolatile Multilevel Resistive Switching in 
Irradiated 
Author :
Shuai, Y. ; Ou, X. ; Luo, W. ; Du, N. ; Wu, C. ; Zhang, W. ; Bürger, D. ; Mayr, C. ; Schüffny, R. ; Zhou, S. ; Helm, M. ; Schmidt, H.
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, UESTC, Chengdu, China
Volume :
34
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
54
Lastpage :
56
Abstract :
Low-energy Ar+ ion irradiation has been applied to an Au/BiFeO3/Pt capacitor structure before deposition of the Au top electrode. The irradiated thin film exhibits multilevel resistive switching (RS) without detrimental resistance degradation, which makes the intermediate resistance states more distinguishable, as compared with the nonirradiated thin film. The stabilization of resistance states after irradiation is discussed based on the analysis of the conduction mechanism during the RS, which was investigated by means of temperature-dependent current-voltage measurement from room temperature to 423 K.
Keywords :
argon; bismuth compounds; electrodes; gold; ion beam effects; platinum; random-access storage; switching circuits; thin film capacitors; Ar; Au-BiFeO3-Pt; capacitor structure; conduction mechanism; intermediate resistance states; irradiated thin film; low-energy ion irradiation; multilevel resistive switching; nonirradiated thin film; nonvolatile multilevel resistive switching; resistance state stabilization; temperature 293 K to 298 K; temperature-dependent current-voltage measurement; top electrode deposition; Argon; Degradation; Gold; Radiation effects; Resistance; Switches; Temperature measurement; Irradiation; rectifying; resistive switching (RS);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2227666
Filename :
6381441
Link To Document :
