Title :
Introduction to the Special Section on the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Author_Institution :
Department of Electrical Engineering, University of California, Riverside, CA, USA
Abstract :
The five papers in this special section were presented at the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting that was held from September 30th to October 3rd in Bordeaux, France. The five papers selected reflect the recent advances in integrated circuit designs implemented in BiCMOS and SiGe technologies.
Keywords :
BiCMOS integrated circuits; Integrated circuit synthesis; Meetings; Signal resolution; Silicon germanium; Special issues and sections;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2014.2317852
