Title :
Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs
Author :
Jazaeri, Farzan ; Sallese, Jean-Michel
Author_Institution :
Swiss Fed. Inst. of Technol. in Lausanne, Lausanne, Switzerland
Abstract :
This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based model, are validated with technology computer-aided design simulations, and the figures of merit have been compared with the inversion mode FETs. For a given current, we found that the channel thermal noise is very similar for both architectures, whereas the IGN is slightly decreased in the JL FETs.
Keywords :
MOSFET; field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; analytical expressions; channel noise; channel thermal noise; coherent charge-based model; computer-aided design simulations; cross-correlation noise; induced gate noise; junctionless FET; long-channel junctionless double-gate MOSFET; Logic gates; MOSFET; Mobile communication; Noise; Thermal noise; Double gate (DG) MOSFET; induced gate noise (IGN); junctionless (JL); thermal noise; thermal noise.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2437954
