• DocumentCode
    1758590
  • Title

    Erratum: A Compact Scattering Model for the Nanoscale Double-Gate MOSFET [Mar 02 481-489]

  • Author

    Rahman, Anisur ; Lundstrom, Mark S.

  • Author_Institution
    , Purdue University, West Lafayette, IN, USA
  • Volume
    62
  • Issue
    7
  • fYear
    2015
  • fDate
    42186
  • Firstpage
    2367
  • Lastpage
    2367
  • Abstract
    Corrections to formulas and equations for the paper "A Compact Scattering Model for the Nanoscale Double-Gate MOSFET" (Rahman, A. and Lundstrom, M.S.; IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 481???489, Mar. 2002) are presented.
  • Keywords
    Backscatter; Charge carrier processes; Double-gate FETs; MOS devices; MOSFET; Nanoscale devices; Semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2437276
  • Filename
    7120114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1758590