• DocumentCode
    1758596
  • Title

    Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode 0.18~\\mu\\hbox {m} CMOS Image Sensors

  • Author

    Martin, Eric ; Nuns, T. ; David, J.-P. ; Gilard, O. ; Vaillant, Joris ; Fereyre, Pierre ; Prevost, Vincent ; Boutillier, M.

  • Author_Institution
    CNES, Toulouse, France
  • Volume
    61
  • Issue
    1
  • fYear
    2014
  • fDate
    Feb. 2014
  • Firstpage
    636
  • Lastpage
    645
  • Abstract
    The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.
  • Keywords
    CMOS image sensors; dark conductivity; gamma-ray effects; photodiodes; proton effects; CMOS image sensors; CMOS pinned photodiode; gamma induced dark current degradation; proton induced dark current degradation; radiation tolerance; Current measurement; Dark current; Degradation; Logic gates; Protons; Radiation effects; Sensors; CIS; TID; dark current; displacement damage dose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2297204
  • Filename
    6733394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1758596