• DocumentCode
    1758664
  • Title

    Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method

  • Author

    Wu, Biqing ; Lin, Siqi ; Shih, Tien-Mo ; Gao, Yulin ; Lu, Yijun ; Zhu, Lihong ; Chen, Guolong ; Chen, Zhong

  • Author_Institution
    Dept. of Electron. Sci., Xiamen Univ., Xiamen, China
  • Volume
    60
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    241
  • Lastpage
    245
  • Abstract
    A method is presented in this study to determine the junction temperature (Tj) of LED in terms of the relationship between the diode reverse current (IR) and Tj . A theoretical model for the dependence of IR on Tj is derived on the basis of the Shockley equation and is validated by our experimental results. The method is compared with the conventional forward voltage method, and its advantages have been identified.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN; InGaN light-emitting diode; LED; Shockley equation; junction-temperature determination; reverse current method; Current measurement; Educational institutions; Junctions; Light emitting diodes; Temperature measurement; Temperature sensors; Voltage measurement; Junction temperature; light-emitting diodes (LEDs); reverse current;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2228656
  • Filename
    6381514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1758664