DocumentCode :
1758664
Title :
Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method
Author :
Wu, Biqing ; Lin, Siqi ; Shih, Tien-Mo ; Gao, Yulin ; Lu, Yijun ; Zhu, Lihong ; Chen, Guolong ; Chen, Zhong
Author_Institution :
Dept. of Electron. Sci., Xiamen Univ., Xiamen, China
Volume :
60
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
241
Lastpage :
245
Abstract :
A method is presented in this study to determine the junction temperature (Tj) of LED in terms of the relationship between the diode reverse current (IR) and Tj . A theoretical model for the dependence of IR on Tj is derived on the basis of the Shockley equation and is validated by our experimental results. The method is compared with the conventional forward voltage method, and its advantages have been identified.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN; InGaN light-emitting diode; LED; Shockley equation; junction-temperature determination; reverse current method; Current measurement; Educational institutions; Junctions; Light emitting diodes; Temperature measurement; Temperature sensors; Voltage measurement; Junction temperature; light-emitting diodes (LEDs); reverse current;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2228656
Filename :
6381514
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1758664
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