Abstract :
Phase-change RAM, magnetic RAM, and resistive RAM offer strong scalability, speed, and power consumption advantages over conventional capacitance-based memory. Recent work shows the feasibility of mass producing these new devices and their suitability for next-generation technology.
Keywords :
MRAM devices; integrated circuit reliability; phase change memories; capacitance-based memory; magnetic RAM; next-generation technology; phase-change RAM; power consumption; resistance-based memory technologies; resistive RAM; Electrodes; Magnetic resonance imaging; Magnetic tunneling; Phase change random access memory; Power distribution; Random access memory; MRAM; PRAM; ReRAM; resistance-based memory devices;
