Title :
´New´ solutions of Class-E power amplifier with finite dc feed inductor at any duty ratio
Author :
Xuekun Du ; Jingchang Nan ; Wenhua Chen ; Zhenhai Shao
Author_Institution :
Sch. of Electron. & Inf. Eng., Liaoning Tech. Univ., Huludao, China
Abstract :
`New´ Class-E solutions are proposed by varying three different design parameters which are introduced in the voltage and current equations in order to extend the Class-E `design space´, of which the `new´ solutions can apply to optimal and suboptimal operation. The design procedure of suboptimal Class-E power amplifier (PA) is analysed in details and then a suboptimal Class-E PA based on GaN HEMT CGH40010F is designed to prove the correctness of the `new´ solutions. The measured maximum output power of 39.6 dB, power-added-efficiency of 74.7% and drain efficiency of 78.9% were obtained at 2.6 GHz with a 28 dBm input power. These measurement results show that a similar or better level of efficiency and output power that are reported for optimal Class-E PAs at lower frequencies using the same transistor, and the presented `new´ solutions extend the `design space´ of Class-E PA. This paper give engineers more degrees of freedom to design Class-E PA.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium compounds; high electron mobility transistors; inductors; wide band gap semiconductors; GaN; HEMT CGH40010F; class-E power amplifier design space; current equations; degrees of freedom; duty ratio; efficiency 74.7 percent; efficiency 78.9 percent; finite dc feed inductor; frequency 2.6 GHz; suboptimal Class-E PA design procedure; transistor; voltage equations;
Journal_Title :
Circuits, Devices & Systems, IET
DOI :
10.1049/iet-cds.2013.0405