Solar Blind Ultraviolet Photodetectors With High Dynamic Resistance Using Zn3Ta2O5 Layer

The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO₃ and heterostructured n-ZnO:In/i-Zn₃Ta₂O₅/p-ZnO:LiNO₃ on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43 × 10¹² Ω compared with 7.94 × 10¹¹ Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn₃Ta₂O₅/p-ZnO:LiNO₃ ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02 × 10¹² Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn₃Ta₂O₅ absorption layer and the PEC oxidation method.