Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

Author

Bambery, R. ; Fei Tan ; Feng, Ming ; Dallesasse, J.M. ; Holonyak, Nick

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

Volume

25

Issue

9

fYear

2013

fDate

41395

Firstpage

859

Lastpage

862

Abstract

Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/I_TH=3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/I_TH=2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.

Keywords

electro-optical modulation; optical communication equipment; quantum well lasers; bit rate 20 Gbit/s; current modulation; fast spontaneous recombination lifetime; quantum well transistor laser; resonance-free frequency response; temperature 25 C; voltage modulation; Bandwidth; High-speed optical techniques; Modulation; Photonics; Transistors; Vertical cavity surface emitting lasers; 20-Gb/s modulation; high speed; laser; photon-assisted tunneling; transistor; voltage modulation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2252887

Filename

6480788