DocumentCode :
1759272
Title :
Role of Electron- and Hole-Collecting Buffer Layers on the Stability of Inverted Polymer: Fullerene Photovoltaic Devices
Author :
Voroshazi, Eszter ; Cardinaletti, Ilaria ; Uytterhoeven, Griet ; Shan Li ; Empl, Max ; Aernouts, Tom ; Rand, Barry P.
Author_Institution :
imec, Leuven, Belgium
Volume :
4
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
265
Lastpage :
270
Abstract :
Systematic device performance and air stability comparison of inverted architecture polythiophene:fullerene photovoltaic cells with eight different electron-collecting layers (ECLs) and two hole-collecting layers are presented in this study. Regardless of the ECL, we achieved an efficiency of over 3.5% and lifetime of over 1000 h. These results indicate the relative interchangeability of various solution-processed ECLs. Long-term (>5000 h) air exposure revealed a secondary failure mechanism of inverted cells, which is assigned to hindered exciton harvesting. Notably, devices with a polymeric hole-collecting layer and Ag/Al electrode exhibited the longest lifetime (defined as 80% of the initial performance) of 4000 h, compared with 3000 h for MoO 3/Ag/Al.
Keywords :
buffer layers; excitons; polymers; solar cells; Ag-Al electrode; air stability; electron-collecting buffer layer; exciton harvesting; hole-collecting buffer layer; inverted architecture polythiophene-fullerene photovoltaic cells; inverted cells; inverted polymer-fullerene photovoltaic device stability; long-term air exposure; polymeric hole-collecting layer; relative interchangeability; secondary failure mechanism; solution-processed electron-collecting layers; systematic device performance; time 4000 h; Aging; Degradation; Humidity; Metals; Performance evaluation; Photovoltaic cells; Polymers; Degradation; interface phenomena; organic semiconductors; oxygen; solar cells;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2287913
Filename :
6664999
Link To Document :
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