DocumentCode
1759344
Title
Resistive Switching Performance Improvement of 
Bilayer ReRAM Devices by Inserting 
${rm AlO}_{delta}$ ; ReRAM; multilevel; tantalum oxide; triple-layer;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2288311
Filename
6665006
Link To Document