DocumentCode :
1759344
Title :
Resistive Switching Performance Improvement of 
Bilayer ReRAM Devices by Inserting 
${rm AlO}_{delta}$ ; ReRAM; multilevel; tantalum oxide; triple-layer;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2288311
Filename :
6665006
Link To Document :
