DocumentCode
1759365
Title
Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors
Author
Pelamatti, Alice ; Goiffon, Vincent ; Estribeau, Magali ; Cervantes, Paola ; Magnan, Pierre
Author_Institution
ISAE, Univ. de Toulouse, Toulouse, France
Volume
34
Issue
7
fYear
2013
fDate
41456
Firstpage
900
Lastpage
902
Abstract
This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters. While in the literature and technical documentations FWC values are generally presented as fixed values independent of the operating conditions, this letter demonstrates that the PPD charge handling capability is strongly dependent on the photon flux.
Keywords
CMOS image sensors; photodiodes; charge handling capability; full well capacity; operating condition; photon flux; pinned photodiode CMOS image sensors; pixel parameter; Active pixel sensor (APS); CMOS Image Sensors (CIS); charge transfer; full well capacity; pinned photodiode (PPD); pinning voltage; semiconductor device modeling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2260523
Filename
6527329
Link To Document