• DocumentCode
    1759365
  • Title

    Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

  • Author

    Pelamatti, Alice ; Goiffon, Vincent ; Estribeau, Magali ; Cervantes, Paola ; Magnan, Pierre

  • Author_Institution
    ISAE, Univ. de Toulouse, Toulouse, France
  • Volume
    34
  • Issue
    7
  • fYear
    2013
  • fDate
    41456
  • Firstpage
    900
  • Lastpage
    902
  • Abstract
    This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters. While in the literature and technical documentations FWC values are generally presented as fixed values independent of the operating conditions, this letter demonstrates that the PPD charge handling capability is strongly dependent on the photon flux.
  • Keywords
    CMOS image sensors; photodiodes; charge handling capability; full well capacity; operating condition; photon flux; pinned photodiode CMOS image sensors; pixel parameter; Active pixel sensor (APS); CMOS Image Sensors (CIS); charge transfer; full well capacity; pinned photodiode (PPD); pinning voltage; semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2260523
  • Filename
    6527329