DocumentCode :
1759404
Title :
High- 
AlN-on-Silicon Resonators With Annexed Platforms for Portable Integrated VOC Sensing
Author :
Fu, Jenna L. ; Ayazi, Farrokh
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
24
Issue :
2
fYear :
2015
fDate :
42095
Firstpage :
503
Lastpage :
509
Abstract :
Aluminum nitride (AlN) thin-film piezoelectric-onsilicon resonators optimized for gravimetric gas sensing are presented in this paper. Sensors with polyisobutylenefunctionalized annexed platforms exhibit a linear sensitivity of -0.09 Hz/ppm to toluene and -0.18 Hz/ppm to xylene. The annexed platform design enables the sensor to maintain a high Q of 3700 in air and low motional resistance of 1.1 kQ during operation, which ensures low-power oscillator interfacing and readout. AlN-on-Si resonators with annexed platforms are suitable for array implementation in environmental sensing microsystems that measure temperature, humidity, and various gases of importance to health and safety.
Keywords :
III-V semiconductors; aluminium compounds; crystal resonators; gas sensors; micromechanical resonators; organic compounds; portable instruments; silicon; wide band gap semiconductors; AlN-Si; aluminum nitride thin-film piezoelectric-on-silicon resonators; annexed platforms; array implementation; environmental sensing microsystems; gravimetric gas sensing; high-Q aluminum nitride-on-silicon resonators; portable integrated VOC sensing; volatile organic compounds; xylene; Frequency measurement; Loading; Resonant frequency; Sensitivity; Silicon; Temperature sensors; Piezoelectric-on-silicon resonator; VOC sensor; gravimetric sensor; mass sensitivity; mass sensitivity.;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2014.2333743
Filename :
6856136
Link To Document :
