Title :
160 GHz Passively Mode-Locked AlGaInAs 1.55 μm Strained Quantum-Well Lasers With Deeply Etched Intracavity Mirrors
Author :
Lianping Hou ; Avrutin, E.A. ; Haji, Mohsin ; Dylewicz, R. ; Bryce, A.A. ; Marsh, John H.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
We have characterized the reflectivity, modal discrimination, and passive mode locking performance of diode lasers with intracavity reflectors (ICR) composed of a different number of slots. Upon analysis, we demonstrate that a monolithic semiconductor mode-locked laser comprising a compound cavity formed by a single deeply etched ICR slot fabricated using the 1.55 μm AlGaInAs strained quantum-well material provides the best harmonic (M = 4) mode-locking performance, with Gaussian-pulses generated at a pulse repetition rate of 161.8 GHz and a pulse duration of 1.67 ps, providing a time-bandwidth product of 0.81.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; optical fabrication; optical pulse generation; quantum well lasers; reflectivity; AlGaInAs; Gaussian-pulse generation; compound cavity; deeply etched intracavity mirrors; diode lasers; frequency 160 GHz; frequency 161.8 GHz; harmonic mode-locking performance; intracavity reflectors; modal discrimination; monolithic semiconductor mode-locked laser; passive mode locking performance; passively mode-locked strained quantum-well lasers; pulse duration; pulse repetition rate; reflectivity; single deeply etched ICR slot; strained quantum-well material; time 1.67 ps; time-bandwidth product; wavelength 1.55 mum; Cavity resonators; Harmonic analysis; Laser mode locking; Mirrors; Reflectivity; Semiconductor lasers; Compound cavities; mode locked lasers; semiconductor lasers; ultrafast pulse generation;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2012.2230318
