Growth Process Modeling of III–V Nanowire Synthesis via Selective Area Metal–Organic Chemical Vapor Deposition

While selective area metal-organic chemical vapor deposition has been widely recognized as a promising nanowire fabrication technique, its growth mechanism still remains indecisive in the literature. There are active debates on the effects of various process parameters on nanowire growth. In this paper, we attempt to establish a growth process model that coherently explains various growth patterns observed in experiments. By quantifying contributions from various diffusion sources, the model not only confirms the synthesis mechanism, but also explains the spatial and temporal patterns of nanowire growth. The model sets the basis for systematic process optimization and control.