Title :
Effect of Nitrous Oxide High Pressure Annealing on the Performance of Low Temperature, Soluble-Based IZO Transistors
Author :
Hyo Jin Kim ; Byeong Geun Son ; Chul-Kyu Lee ; So Yeon Je ; Ju Yeon Won ; Jae Kyeong Jeong
Author_Institution :
Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea
Abstract :
The effects of oxygen (O2) and nitrous oxygen (N2O) high pressure annealing (HPA) on soluble indium-zinc oxide (IZO) thin-film transistors (TFTs) were compared. The N2O HPA treatment produced superior device performance compared with the O2 HPA treatment. The N2O HPA-treated device exhibited a reasonable μSAT, low SS, Vth, and high ION/OFF ratio of 1.0 cm2/Vs, 0.09 V/decade, 1.4 V, and 2.3×107, respectively, even at a temperature as low as 200 °C. This improvement was attributed to the supply of reactive oxygen atoms from N2O molecules, leading to the reduction of oxygen vacancies, and a decrease in the impurity concentration of the resulting soluble IZO film.
Keywords :
annealing; indium compounds; nitrogen compounds; oxygen; thin film transistors; HPA treatment; InZnO; N2O; O2; TFT; impurity concentration; nitrous oxide high pressure annealing; reactive oxygen atom supply; soluble indium-zinc oxide thin-film transistor; Annealing; Impurities; Metals; Performance evaluation; Temperature; Thin film transistors; Indium–zinc oxide semiconductor; high pressure annealing; nitrous oxygen; oxygen vacancy; soluble process; thin-film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2302841
