Effect of Nitrous Oxide High Pressure Annealing on the Performance of Low Temperature, Soluble-Based IZO Transistors

Author

Hyo Jin Kim ; Byeong Geun Son ; Chul-Kyu Lee ; So Yeon Je ; Ju Yeon Won ; Jae Kyeong Jeong

Author_Institution

Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea

Volume

35

Issue

4

fYear

2014

fDate

41730

Firstpage

455

Lastpage

457

Abstract

The effects of oxygen (O₂) and nitrous oxygen (N₂O) high pressure annealing (HPA) on soluble indium-zinc oxide (IZO) thin-film transistors (TFTs) were compared. The N₂O HPA treatment produced superior device performance compared with the O2 HPA treatment. The N₂O HPA-treated device exhibited a reasonable μSAT, low SS, Vth, and high ION/OFF ratio of 1.0 cm²/Vs, 0.09 V/decade, 1.4 V, and 2.3×10⁷, respectively, even at a temperature as low as 200 °C. This improvement was attributed to the supply of reactive oxygen atoms from N2O molecules, leading to the reduction of oxygen vacancies, and a decrease in the impurity concentration of the resulting soluble IZO film.

Keywords

annealing; indium compounds; nitrogen compounds; oxygen; thin film transistors; HPA treatment; InZnO; N₂O; O₂; TFT; impurity concentration; nitrous oxide high pressure annealing; reactive oxygen atom supply; soluble indium-zinc oxide thin-film transistor; Annealing; Impurities; Metals; Performance evaluation; Temperature; Thin film transistors; Indium–zinc oxide semiconductor; high pressure annealing; nitrous oxygen; oxygen vacancy; soluble process; thin-film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2302841

Filename

6734697