A 220–285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept

Author

Fanyi Meng ; Kaixue Ma ; Kiat Seng Yeo ; Chirn Chye Boon ; Wei Meng Lim ; Shanshan Xu

Author_Institution

Integrated Circuit (IC) Design Center of Excellence, Nanyang Technol. Univ., Singapore, Singapore

Volume

5

Issue

4

fYear

2015

fDate

42186

Firstpage

649

Lastpage

651

Abstract

The paper reports a single-pole double-throw (SPDT) switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit models are introduced for analyzing the operation mechanism of proposed switch. The fabricated SPDT switch features measured insertion loss of 4.2 dB including RF pad losses, isolation of 19 dB, return loss of better than 10 dB, simulated P1 dB of 9.2 dBm, and zero power consumption. To the best of authors´ knowledge, this switch achieves the highest operating frequency and smallest chip size among reported SPDT switches in CMOS and BiCMOS technologies.

Keywords

CMOS integrated circuits; equivalent circuits; field effect MIMIC; switches; RF pad losses; SPDT switch; bulk CMOS technology; coupled-lines topology; equivalent circuit models; frequency 220 GHz to 285 GHz; return loss; single-pole double-throw switch; size 65 nm; switchable resonator; zero power consumption; CMOS integrated circuits; Insertion loss; Loss measurement; Ports (Computers); Switches; Switching circuits; Transmission line measurements; CMOS; coupled-lines; miniaturization; silicon; single-pole double-throw (SPDT) switches; switchable resonator;

fLanguage

English

Journal_Title

Terahertz Science and Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-342X

Type

jour

DOI

10.1109/TTHZ.2015.2436216

Filename

7121033