DocumentCode
1759702
Title
The Role of Ti Capping Layer in HfOx -Based RRAM Devices
Author
Zheng Fang ; Xin Peng Wang ; Joon Sohn ; Bao Bin Weng ; Zhi Ping Zhang ; Zhi Xian Chen ; Yan Zhe Tang ; Guo-Qiang Lo ; Provine, J. ; Wong, S. Simon ; Wong, H.-S Philip ; Dim-Lee Kwong
Author_Institution
Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore
Volume
35
Issue
9
fYear
2014
fDate
Sept. 2014
Firstpage
912
Lastpage
914
Abstract
In this letter, we examine the role of the Ti capping layer in HfOx-based resistive random access memory (RRAM) devices on the memory performance. It is found that with a thicker Ti capping layer, the fresh device initial leakage current increases and as a result, the forming voltage decreases. In addition, with a thin Ti layer of <;3 nm (on top of 8-nm HfOx), there is no resistive switching, while by inserting a thicker Ti layer of 10 nm, the memory window enlarges to about two orders. Very good uniformity has also been observed in thick Ti capping devices, demonstrating the effectiveness in RRAM device engineering. It is believed that the Ti layer serves as an oxygen reservoir, by extracting oxygen during device formation and electrical forming process and facilitates resistive switching thereafter.
Keywords
hafnium compounds; random-access storage; titanium; HfOx; RRAM devices; Ti; capping layer; memory performance; oxygen reservoir; resistive random access memory device; resistive switching; size 10 nm; size 8 nm; Electrodes; Electron devices; Hafnium compounds; Performance evaluation; Resistance; Switches; Nonvolatile memory; Ti capping; Ti capping.; resistive random access memory (RRAM); resistive switching (RS);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2334311
Filename
6856165
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