Testing 3-D IC Through-Silicon-Vias (TSVs) by Direct Probing

Author

Kandalaft, Nabeeh ; Rashidzadeh, R. ; Ahmadi, Mahdi

Author_Institution

Electr. Eng. Dept., Univ. of Windsor, Windsor, ON, Canada

Volume

32

Issue

4

fYear

2013

fDate

41365

Firstpage

538

Lastpage

546

Abstract

Testing the integrity of interconnects realized by through silicon vias (TSVs) in 3-D integrated circuits (3-D IC) is considered a challenging task. TSVs are excessively small and fragile for current probe technology. In this paper, a new spring-type probe using microelectromechanical systems (MEMS) technology is presented. The implemented MEMS probe supports the required pitch for TSV direct probing and minimizes the undesired scrub marks on TSV surface. Simulation results indicate that the implemented MEMS probe can operate at the gigahertz frequency range without significant test signal degradation.

Keywords

integrated circuit interconnections; integrated circuit testing; micromechanical devices; probes; three-dimensional integrated circuits; 3D IC TSV testing; 3D IC through-silicon-via testing; MEMS probe; TSV direct probing; TSV surface; current probe technology; interconnect integrity; microelectromechanical system technology; spring-type probe; test signal degradation; undesired scrub marks; Circuit faults; Contacts; Force; Micromechanical devices; Probes; Stress; Through-silicon vias; Microelectromechanical systems; test probe; three-dimensional integrated circuits (3-D IC); through silicon via;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.2012.2237226

Filename

6480855