Title :
V-band injection-locked oscillator with 9 GHz locking range
Author :
Feng, C. ; Yu, Xiao Peng ; Lu, Z.H. ; Lim, Wei Meng ; Sui, W.Q.
Author_Institution :
Zhejiang Univ., Hangshou, China
Abstract :
An injection-locked oscillator (ILO) with a self-biased injection circuit is proposed. By using the series-inductive peaking technique, the efficiency of the signal injection is considerably improved. Implemented in Global Foundries 65 nm bulk CMOS process, the proposed ILO demonstrated a 9 GHz locking range and can operate in 52-71 GHz with the tuning mechanism. Occupying a silicon area of 0.3 mm2, the circuit draws 13 mA from a 1.2 V supply including the output buffers.
Keywords :
CMOS integrated circuits; circuit tuning; injection locked oscillators; microwave oscillators; CMOS process; Global Foundries; ILO; V-band injection-locked oscillator; current 13 mA; frequency 52 GHz to 71 GHz; frequency 9 GHz; locking range; self-biased injection circuit; series-inductive peaking technique; signal injection; size 65 nm; tuning mechanism; voltage 1.2 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.0182
