Title :
Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model
Author :
Kim, Sungho ; Choi, C.-J. ; Kim, Heonhwan
Author_Institution :
Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea
Abstract :
The carrier transport mechanism of low resistance Ti/Al/Au ohmic contact to AlGaN/GaN heterostructures was investigated. Based on a parallel network model consisting of the predominant ohmic path (made by TiN-based contact inclusions) and rest region (no interfacial reaction), the formation of ohmic contact was found to be due to tunnelling of carriers through the thin barrier formed at the TiN-based contact inclusion, where the barrier height was 0.45 eV and the carrier density was 9.0 × 1018 cm- 3.
Keywords :
III-V semiconductors; aluminium; aluminium compounds; carrier density; carrier mobility; electric resistance; gallium compounds; gold; high electron mobility transistors; ohmic contacts; semiconductor heterojunctions; semiconductor-metal boundaries; titanium; tunnelling; wide band gap semiconductors; Ti-Al-Au-AlGaN-GaN; carrier density; carrier transport mechanism; carriers tunnelling; contact inclusion; electron volt energy 0.45 eV; heterostructures; low resistance ohmic contact; parallel network model; predominant ohmic path; rest region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.0463
