Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model

Author

Kim, Sungho ; Choi, C.-J. ; Kim, Heonhwan

Author_Institution

Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea

Volume

49

Issue

8

fYear

2013

fDate

April 11 2013

Firstpage

561

Lastpage

562

Abstract

The carrier transport mechanism of low resistance Ti/Al/Au ohmic contact to AlGaN/GaN heterostructures was investigated. Based on a parallel network model consisting of the predominant ohmic path (made by TiN-based contact inclusions) and rest region (no interfacial reaction), the formation of ohmic contact was found to be due to tunnelling of carriers through the thin barrier formed at the TiN-based contact inclusion, where the barrier height was 0.45 eV and the carrier density was 9.0 × 10¹⁸ cm^{- 3}.

Keywords

III-V semiconductors; aluminium; aluminium compounds; carrier density; carrier mobility; electric resistance; gallium compounds; gold; high electron mobility transistors; ohmic contacts; semiconductor heterojunctions; semiconductor-metal boundaries; titanium; tunnelling; wide band gap semiconductors; Ti-Al-Au-AlGaN-GaN; carrier density; carrier transport mechanism; carriers tunnelling; contact inclusion; electron volt energy 0.45 eV; heterostructures; low resistance ohmic contact; parallel network model; predominant ohmic path; rest region;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.0463

Filename

6527560