DocumentCode :
1760293
Title :
1342 nm High-Power Picosecond Pulse Generation by a Passively Mode-Locked 
Laser
Author :
Ying Yang ; Jia Hou ; Jing-Liang He ; Jin-Long Xu ; He Yang ; Fei Lou ; Zhao-Wei Wang ; Rui-Hua Wang ; Xun-Min Liu
Author_Institution :
Key Lab. of Crystal Mater., Shandong Univ., Jinan, China
Volume :
25
Issue :
15
fYear :
2013
fDate :
Aug.1, 2013
Firstpage :
1506
Lastpage :
1509
Abstract :
A high-power diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror is demonstrated in this letter. With the optimum cavity design, the maximum average output power of 2.19 W is obtained with an incident pump power of 12.35 W, corresponding to a slope efficiency of 19% and an optical conversion efficiency of 17.7%. The minimum pulse duration is measured to be 8.6 ps with the repetition rate of 63.4 MHz. The single pulse energy and peak power are calculated to be 34.5 nJ and 4 kW, respectively.
Keywords :
laser beams; laser cavity resonators; laser mirrors; laser mode locking; neodymium; optical pulse generation; optical pumping; optical saturable absorption; semiconductor lasers; solid lasers; yttrium compounds; YVO4:Nd; energy 34.5 nJ; frequency 63.4 MHz; high-power diode-pumped passively mode-locked laser; high-power picosecond pulse generation; incident pump power; laser peak power; maximum average output power; minimum pulse duration; optical conversion efficiency; optimum cavity design; power 12.35 W; power 2.19 W; power 4 kW; repetition rate; semiconductor saturable absorber mirror; single pulse energy; slope efficiency; time 8.6 ps; wavelength 1342 nm; ${rm Nd}{:}{rm YVO}_{4}$
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2267211
Filename :
6527891
Link To Document :
