Title :
Microfabricated V-Groove Power Inductors Using Multilayer Co–Zr–O Thin Films for Very-High-Frequency DC–DC Converters
Author :
Di Yao ; Levey, Christopher G. ; Rui Tian ; Sullivan, C.R.
Author_Institution :
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
Abstract :
V-groove microinductors are designed, fabricated, and tested for operation above 10 MHz. Multilayer nanogranular Co-Zr-O/ZrO2 magnetic thin films are used as the core material of these inductors, to improve the magnetic performance of the films deposited on the sidewalls of V-grooves and to control eddy-current loss in the core. Prototype V-groove inductors are fabricated in a Si substrate based on optimization results for 7 to 3.3-V, 1-A dc-dc buck converters. The inductors exhibit an inductance of 3.4 nH from 10 to 100 MHz, a dc resistance of 3.83 mΩ, and a quality factor of up to at least 50. The prototype inductors are a promising candidate for high-power-density high-efficiency dc-dc converters. The measured inductor performance indicates that they could be used to make a 7 to 3.3-V, 1-A converter exhibiting a power density of 2.5 W/mm2 and an efficiency of 86% at 100 MHz; or a power density of 0.36 W/mm2 and an efficiency of 91% at 11 MHz.
Keywords :
DC-DC power convertors; Q-factor; cobalt compounds; eddy current losses; magnetic thin films; power inductors; silicon; thin film inductors; zirconium compounds; CoZrO; CoZrO-ZrO2; DC-DC buck converter; Si substrate; V-groove microinductor; current 1 A; eddy-current loss; frequency 10 MHz to 100 MHz; frequency 11 MHz; magnetic thin film; microfabricated V-groove power inductor; multilayer Co-Zr-O thin film; multilayer nanogranular; power density; quality factor; resistance 3.83 mohm; very-high-frequency DC-DC converter; voltage 7 V to 3.3 V; Electrical resistance measurement; Inductance; Inductors; Magnetic cores; Magnetic hysteresis; Magnetic materials; Resistance; High-frequency dc–dc converter; V-groove; inductors; microfabricated inductor; thin films; very-high-frequency (VHF) power conversion;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2012.2233760