DocumentCode :
1760605
Title :
Local Crystallization of {\\rm LaB}_{6} Yielding Compact, Strong Thermionic Electron Emission Source
Author :
Jun Hee Choi ; Ho Young Ahn ; Yun Sung Lee ; Min Ho Yang ; Chan-Wook Baik ; Kyung Sang Cho ; Sun Il Kim ; Seong-Jun Jeong ; Jong-Myeong Jeon ; Miyoung Kim ; Sungwoo Hwang
Author_Institution :
Samsung Adv. Inst. of Technol., Kiheung, South Korea
Volume :
34
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
1322
Lastpage :
1324
Abstract :
Local microheating of amorphous LaB6 film could control the degree of crystallization as determined by spatially resolved Raman spectroscopy and transmission electron microscopy. With full crystallization of the LaB6, we achieved micrometer-sized thermionic electron emission source with the maximum current density of 1.2 A/cm2. The advantage of fabricating a micrometer-sized emitter with high current density enables versatile applications such as compact X-ray or vacuum type terahertz radiation sources. A new structure of micrometer-sized, lateral-type vacuum channel transistor is proposed based on the simulation. The calculated electron travelling time from emitter-to-collector was 8.3 ps at the traveling distance of ~10 μm, meaning that the maximum operation frequency is 120 GHz.
Keywords :
Raman spectroscopy; crystallisation; heating; lanthanum compounds; thermionic electron emission; transistors; transmission electron microscopy; LaB6; Raman spectroscopy; lateral-type vacuum channel transistor; local crystallization; microheating; micrometer-sized emitter; micrometer-sized thermionic electron emission; transmission electron microscopy; yielding compact; Annealing; Crystallization; Current density; Electron emission; Heating; Thermionic emission; Transistors; ${rm LaB}_{6}$; local heating; thermionic emission;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2277853
Filename :
6585758
Link To Document :
بازگشت