مرکز منطقه ای اطلاع رساني علوم و فناوري - Performance and Reliability of <formula formulatype="inline"> <img src="/images/tex/19184.gif" alt="{\\rm Gd}_{2}{\\rm O}_{3}"> </formula> and Stacked <formula formulatype="inline"> <img src="/images/tex/20883.gif" alt="{\\rm Gd}_{2}{\\rm O}

Title :

Performance and Reliability of ${\\rm Gd}_{2}{\\rm O}_{3}$ and Stacked ${\\rm Gd}_{2}{\\rm O}_{3}\\hbox {-}</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Padmanabhan, Regina ; Bhat, Nagaraj ; Mohan, Swati</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electr. Commun. Eng., Indian Inst. of Sci., Bangalore, India</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>60</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>5</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>41395</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1523</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1528</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Gd<sub>2</sub>O<sub>3</sub>-based metal-insulator-metal capacitors have been characterized with single layer (Gd<sub>2</sub>O<sub>3</sub>) and bilayer (Gd<sub>2</sub>O<sub>3</sub>/Eu<sub>2</sub>O<sub>3</sub> and Eu<sub>2</sub>O<sub>3</sub>/Gd<sub>2</sub>O<sub>3</sub>) stacks for analog and DRAM applications. Although single layer Gd<sub>2</sub>O<sub>3</sub> capacitors provide highest capacitance density (15 fF/μm<sup>2</sup>), they suffer from high leakage current density, poor capacitance density-voltage linearity, and reliability. The stacked dielectrics help to reduce leakage current density (1.2×10<sup>-5</sup> A/cm<sup>2</sup> and 2.7 × 10<sup>-5</sup> A/cm<sup>2</sup> for Gd<sub>2</sub>O<sub>3</sub>/Eu<sub>2</sub>O<sub>3</sub> and Eu<sub>2</sub>O<sub>3</sub>/Gd<sub>2</sub>O<sub>3</sub>, respectively, at -1 V), improve quadratic voltage coefficient of capacitance (331 ppm/V<sup>2</sup> and 374 ppm/V<sup>2</sup> for Gd<sub>2</sub>O<sub>3</sub>/Eu<sub>2</sub>O<sub>3</sub> and Eu<sub>2</sub>O<sub>3</sub>/Gd<sub>2</sub>O<sub>3</sub>, respectively, at 1 MHz), and improve reliability, with a marginal reduction in capacitance density. This is attributed to lower trap heights as determined from Poole-Frenkel conduction mechanism, and lower defect density as determined from electrode polarization model.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>DRAM chips; MIM devices; capacitance; capacitors; current density; europium compounds; gadolinium compounds; semiconductor device reliability; DRAM applications; Gd2O3-based metal-insulator-metal capacitors; Gd<sub>2</sub>O<sub>3</sub>-Eu<sub>2</sub>O<sub>3</sub>; Poole-Frenkel conduction mechanism; analog applications; bilayer stacks; capacitance density-voltage linearity; defect density; electrode polarization model; frequency 1 MHz; leakage current density; single layer stacks; stacked dielectrics; trap heights; Capacitance; Capacitors; Leakage current; MIM capacitors; Reliability; Stress; <formula formulatype=$ ${rm Eu}_{2}{rm O}_{3}$; ${rm Gd}_{2}{rm O}_{3}$; constant current stress (CCS); constant voltage stress (CVS); metal-insulator-metal (MIM); reliability; voltage coefficient of capacitance (VCC);