• DocumentCode
    1760760
  • Title

    Effect of Plasma Process for SiO2 Film on Sidewall

  • Author

    Tanimura, Tatsuhiko ; Hsiao, Chihhsiang ; Akiyama, Koji ; Hirota, Yoshihiro ; Sato, Jun ; Kaitsuka, Takanobu

  • Author_Institution
    Leading-Edge Process Dev. Center, Tokyo Electron Ltd., Nirasaki, Japan
  • Volume
    28
  • Issue
    3
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    278
  • Lastpage
    282
  • Abstract
    We evaluated the physical and electrical characteristics of SiO2 treated by plasma oxidation on top and sidewall. The plasma process is less effective for SiO2 on sidewall than on top and further less for small pattern. Both the characteristics for SiO2 on sidewall are sensitive to plasma condition in deposition sequence, while not for SiO2 on top. When the plasma process is used as post treatment on SiO2 with high coverage and the poor characteristics, they are also not dependent on the condition. Moreover, the post plasma treatment can improve electrical characteristic beyond the level of SiO2 deposited by the same plasma oxidation condition.
  • Keywords
    dielectric thin films; oxidation; plasma deposition; silicon compounds; SiO2; deposition sequence; dielectric film; plasma oxidation; plasma process effect; sidewall; Atomic layer deposition; Films; Leakage currents; Oxidation; Plasmas; Silicon; Surface treatment; Dielectric films; Leakage currents; MOS devices; Plasma materials processing; leakage currents; metal oxide semiconductor (MOS) devices; plasma materials processing;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2015.2444404
  • Filename
    7122360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1760760