DocumentCode :
1760895
Title :
Robust High Speed Ternary Magnetic Content Addressable Memory
Author :
Gupta, Mohit Kumar ; Hasan, Mohd
Author_Institution :
Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India
Volume :
62
Issue :
4
fYear :
2015
fDate :
42095
Firstpage :
1163
Lastpage :
1169
Abstract :
Designing robust, low power, and delay ternary magnetic content addressable memory (TMCAM) using spintronic-based devices like magnetic tunnel junction (MTJ) is a challenge. Process variations in MTJ and transistor degrade the performance of ternary content-addressable memory (TCAM) as the number of bits increases. To bring TCAM using MTJ (TMCAM) to practical use for wide arrays (>2048 bits), its cell has to be designed with large tolerance to all types of variations. Reducing the power consumption associated with searching without the increase in delay is also essential for the designing of TMCAMs. The proposed TMCAM cell has guaranteed read-disturbance immunity, low delay, and comparable power as compared with the reported MTJ-based magnetic-content-addressable memory (MCAM). Monte Carlo simulation was performed for proving the robustness of the proposed TMCAM by considering both variations in MTJ and transistor parameters. A Verilog-A model of the MTJ along with 45-nm CMOS technology is used for the simulation. A delay reduction of 1.23 times with power decrement of 1.23 times is obtained compared with previously reported MCAM for TMR = 3. This leads to a power-delay product improvement of 1.5 times for 2048-bit TMCAM.
Keywords :
CMOS digital integrated circuits; Monte Carlo methods; content-addressable storage; integrated circuit modelling; logic design; low-power electronics; magnetic storage; magnetic tunnelling; magnetoelectronics; power consumption; synchronisation; transistor circuits; CMOS technology; MTJ; Monte Carlo simulation; TMCAM cell; Verilog-A model; delay reduction; low power TMCAM; magnetic tunnel junction; power consumption; power decrement; read-disturbance immunity; size 45 nm; spintronic-based devices; ternary magnetic content addressable memory; transistor parameters; Computer aided manufacturing; Delays; Junctions; Magnetic tunneling; Transistors; Tunneling magnetoresistance; Writing; Associative memory; content-addressable memory (CAM)/ternary content-addressable memory (TCAM); magnetic memory; magnetic tunnel junction (MTJ); memory array; spintronics; ternary magnetic-content-addressable memory (TMCAM); ternary magnetic-content-addressable memory (TMCAM).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2398122
Filename :
7057658
Link To Document :
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