Title :
Monolithic ultra-low-power 6 Gbit/s inductorless PRBS generator for silicon HBT-based carrier-injection electro-absorption modulator
Author :
Fu, E. ; Koomson, V.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA, USA
Abstract :
A low-power pseudo-random bit sequence (PRBS) generator for testing a high-speed optical transmitter module has been realised in a 130 nm bipolar CMOS process. The transmitter consists of a monolithic driver circuit architecture and a heterojunction bipolar transistor (HBT)-based carrier-injection electro-absorption modulator. A 10 Gbit/s current mode logic latch with only 0.6 mW power consumption is designed by scaling down the current density without degrading the overall transmitter speed performance. The 27-1 PRBS generator circuit consumes only 42.75 mW at 6 Gbit/s operating speeds with a 1.5 V dc power supply. The core circuit power consumption is 9 mW.
Keywords :
BiCMOS integrated circuits; current-mode logic; electro-optical modulation; electroabsorption; elemental semiconductors; heterojunction bipolar transistors; integrated optoelectronics; low-power electronics; power consumption; random sequences; silicon; Si; bipolar CMOS process; bit rate 10 Gbit/s to 6 Gbit/s; core circuit power consumption; current density; current mode logic latch; dc power supply; heterojunction bipolar transistor; high-speed optical transmitter module; low-power pseudorandom bit sequence generator; monolithic driver circuit architecture; monolithic ultra-low-power inductorless PRBS generator; power 0.6 mW to 42.75 mW; power consumption; silicon HBT- based carrier-injection electro-absorption modulator; size 130 nm; voltage 1.5 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.0586