Title :
Characterization of Thallium Bromide Detectors Made From Material Purified by the Filter Method
Author :
Onodera, Takayuki ; Hitomi, Kentarou ; Tada, Tetsuya ; Shoji, Tomoyuki ; Mochizuki, K.
Author_Institution :
Dept. of Electron. & Intell. Syst., Tohoku Inst. of Technol., Sendai, Japan
Abstract :
Thallium bromide (TlBr) has been regarded as candidate detector materials for the gamma-ray spectrometers operating at room temperature. In this study, a simple and rapid method, the filter method, was performed to purify a raw TlBr material used for fabrication of TlBr detectors. The material was loaded on shards of crashed quartz and installed in a Pyrex tube, and was melted using a furnace. A purified material passing through interspaces of the shards of quartz was collected in a quartz ampoule located at the outlet of the Pyrex tube. After the purification, impurities colored black extracted from the raw material remained. TlBr crystals were then grown by the travelling molten zone method both from the raw material and the purified material. TlBr detectors were fabricated from the grown crystals, and were characterized by measuring mobility-lifetime products (μτ) for carriers and gamma-ray spectra ( 137Cs) at room temperature. μτ for electrons of a TlBr detector fabricated from the purified material was around 5 times higher than that of a detector fabricated from the raw material.
Keywords :
crystal purification; gamma-ray detection; gamma-ray spectra; melting; thallium compounds; zone melting; (TlBr); TlBr; crashed quartz; filter method; gamma-ray spectra; melting; mobility-lifetime products; purified material; pyrex tube; raw material; temperature 293 K to 298 K; thallium bromide detectors; travelling molten zone method; Crystals; Detectors; Electron tubes; Gamma-rays; Impurities; Raw materials; Compound semiconductors; filter method; semiconductor radiation detectors; thallium bromide (TlBr);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2275171