Title :
A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors
Author :
Salihoglu, O. ; Muti, A. ; Aydinli, A.
Author_Institution :
Dept. of Phys., Bilkent Univ., Ankara, Turkey
Abstract :
In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated under same conditions. We use ALD deposited Al2O3, HfO2, TiO2, ZnO, plasma enhanced chemical vapor deposition deposited SiO2, Si3N4, and sulfur containing octadecanethiol self assembled monolayer passivation layers on InAs/GaSb p-i-n superlattice diodes with an average cutoff wavelength of 5.1 μm. Passivated and unpassivated photodetectors compared for their electrical performances.
Keywords :
III-V semiconductors; aluminium compounds; atomic layer deposition; gallium compounds; hafnium compounds; indium compounds; infrared detectors; monolayers; organic compounds; p-i-n photodiodes; passivation; photodetectors; plasma CVD; self-assembly; semiconductor superlattices; silicon compounds; titanium compounds; zinc compounds; ALD; Al2O3; HfO2; InAs-GaSb; Si3N4; SiO2; TiO2; ZnO; atomic layer deposition; average cutoff wavelength; electrical performances; infrared photodetectors; p-i-n superlattice diodes; passivation layers; pin superlattice photodetectors; plasma enhanced chemical vapor deposition; sulfur containing octadecanethiol self assembled monolayer; wavelength 5.1 mum; Aluminum oxide; Dark current; Passivation; Photodetectors; Superlattices; Zinc oxide; ALD; InAs/GaSb; Infrared; ODT; Passivation; Photodetector; Thiol;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2013.2267553
