DocumentCode :
1761266
Title :
High-power in-phase coherently coupled VCSEL array based on proton implantation
Author :
Meng Xun ; Chen Xu ; Yiyang Xie ; Yanxu Zhu ; Mingming Mao ; Kun Xu ; Jun Wang ; Jie Liu ; Hongda Chen
Author_Institution :
Key Lab. of Optoelectron. Technol., Beijing Univ. of Technol., Beijing, China
Volume :
50
Issue :
15
fYear :
2014
fDate :
July 17 2014
Firstpage :
1085
Lastpage :
1086
Abstract :
Three-element in-phase coherently coupled arrays of vertical cavity surface-emitting lasers (VCSELs) were fabricated using proton implantation. The arrays show excellent beam quality with a far-field divergence of 4°, while maintaining a stable in-phase mode until a maximum output power of 4 mW under continuous-wave condition. The process for the arrays is simple and the cost is low.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; laser modes; optical fabrication; quantum well lasers; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; GaAs-Al0.3Ga0.7As; GaAs-Al0.3Ga0.7As quantum wells; beam quality; continuous-wave conditions; far-field divergence; high-power in-phase coherently coupled VCSEL array; output power; power 4 mW; proton implantation; stable in-phase mode; three-element in-phase coherently coupled arrays; vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.1298
Filename :
6856356
Link To Document :
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