Substrate cross-talk analysis flow for submicron CMOS system-on-chip

A substrate coupling analysis flow is presented. The proposed method is fully compatible with the industry analogue/radio-frequency design methodology, seamlessly integrates into the design environment, provides accurate estimation of the coupling effects and can model adequately all the mask design level isolation performance trends. Its accuracy is confirmed by correlating simulation results against on-wafer silicon measurements in a 28 nm CMOS set of ring oscillators with a carrier frequency of 670 MHz. The mean error of the proposed method is 665 μV, whereas the error sigma is 765 μV.