DocumentCode :
1761469
Title :
A 1.2-MHz 5.8- \\mu\\hbox {W} Temperature-Compensated Relaxation Oscillator in 130-nm CMOS
Author :
Kuo-Ken Huang ; Wentzloff, David D.
Author_Institution :
Broadcom Corp., San Diego, CA, USA
Volume :
61
Issue :
5
fYear :
2014
fDate :
41760
Firstpage :
334
Lastpage :
338
Abstract :
This brief presents a low-power temperature-compensated relaxation oscillator in 130-nm CMOS for cubic millimeter wireless sensor node applications. An RC network is proposed for the oscillator, which introduces a zero in the transfer function, creating an additional degree of freedom in the step response used for frequency-temperature compensation. This approach uses conventional CMOS resistor and capacitor options and is fully integrated. The oscillator has a measured nominal frequency of 1.24 MHz with 1.0% variation from -20 °C to 60 °C. It occupies an area of 0.02 mm2 and consumes 5.8 μW of active power with a leakage power of 440 pW.
Keywords :
CMOS integrated circuits; RC circuits; compensation; low-power electronics; relaxation oscillators; step response; transfer functions; wireless sensor networks; CMOS resistor; RC network; capacitor options; cubic millimeter wireless sensor node applications; degree of freedom; frequency 1.24 MHz; frequency-temperature compensation; low-power temperature-compensated relaxation oscillator; power 440 pW; power 5.8 muW; size 130 nm; step response; temperature -20 C to -60 C; transfer function; CMOS integrated circuits; Capacitors; Hysteresis; Oscillators; Resistors; Temperature dependence; Wireless sensor networks; CMOS technology; low-power electronics; oscillators; wireless sensor networks;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2014.2312634
Filename :
6807742
Link To Document :
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