Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs

In this letter, we demonstrate the existence of the source-drain series resistance mismatch and its impact on drain current variability with regard to the other mismatch parameters. To this end, we propose a new methodology for the drain current mismatch study based on Y-function, enabling a precise determination of the various variability sources in advanced fully depleted silicon on insulator (SOI) MOS devices.