DocumentCode
1761715
Title
Ensuring Cache Reliability and Energy Scaling at Near-Threshold Voltage With Macho
Author
Mahmood, Tayyeb ; Seokin Hong ; Soontae Kim
Author_Institution
Dept. of Electr. Eng., Univ. of Eng. & Technol., Lahore, Pakistan
Volume
64
Issue
6
fYear
2015
fDate
June 1 2015
Firstpage
1694
Lastpage
1706
Abstract
Nanoscale process variations in conventional SRAM cells are known to limit voltage scaling in microprocessor caches. Recently, a number of novel cache architectures have been proposed which substitute faulty words of one cache line with healthy words of others, to tolerate these failures at low voltages. These schemes rely on the fault maps to identify faulty words, inevitably increasing the chip area. Besides, the relationship between word sizes and the cache failure rates is not well studied in these works. In this paper, we analyze the word substitution schemes by employing Fault Tree Model and Collision Graph Model. A novel cache architecture (Macho) is then proposed based on this model. Macho is dynamically reconfigurable and is locally optimized (tailored to local fault density) using two algorithms: 1) a graph coloring algorithm for moderate fault densities and 2) a bipartite matching algorithm to support high fault densities. An adaptive matching algorithm enables on-demand reconfiguration of Macho to concentrate available resources on cache working sets. As a result, voltage scaling down to 400 mV is possible, tolerating bit failure rates reaching 1 percent (one failure in every 100 cells). This near-threshold voltage (NTV) operation achieves 44 percent energy reduction in our simulated system (CPU+DRAM models) with a 1 MB L2 cache.
Keywords
DRAM chips; SRAM chips; cache storage; fault trees; graph colouring; integrated circuit modelling; integrated circuit reliability; memory architecture; microprocessor chips; reconfigurable architectures; CPU; DRAM models; Macho; NTV operation; SRAM cells; adaptive matching algorithm; bipartite matching algorithm; bit failure rates; cache architectures; cache failure rates; cache line; cache reliability; cache working sets; chip area; collision graph model; energy reduction; energy scaling; fault densities; fault maps; fault tree model; faulty words; graph coloring algorithm; microprocessor caches; nanoscale process variations; near-threshold voltage operation; voltage 400 mV; voltage scaling; word sizes; word substitution schemes; Arrays; Frequency modulation; Heuristic algorithms; Mathematical model; Random access memory; Reliability; Cache architecture; failure model; process variation; reliability; voltage scaling;
fLanguage
English
Journal_Title
Computers, IEEE Transactions on
Publisher
ieee
ISSN
0018-9340
Type
jour
DOI
10.1109/TC.2014.2339813
Filename
6857329
Link To Document