Minority-Carrier Lifetime and Surface Recombination Velocity in Single-Crystal CdTe

Author

Kuciauskas, Darius ; Kanevce, Ana ; Dippo, Pat ; Seyedmohammadi, Shahram ; Malik, Rohit

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

Volume

5

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

366

Lastpage

371

Abstract

We apply an earlier developed method [Kuciauskas et al., IEEE J. Photovoltaics , vol. 3, p. 1319, 2013] to analyze surface and bulk recombination in high-quality undoped single-crystal CdTe. By using two-photon excitation time-resolved photoluminescence, we determined a room-temperature minority-carrier lifetime of 360 ns. This lifetime has weak temperature dependence at 202-295 K. We also show that the high surface recombination velocity (>10⁵ cm/s) typical for single-crystal CdTe was reduced by an order of magnitude to ≈ 1×10⁴ cm/s.

Keywords

II-VI semiconductors; cadmium compounds; carrier lifetime; minority carriers; photoluminescence; surface recombination; time resolved spectra; two-photon spectra; CdTe; room-temperature minority-carrier lifetime; single-crystal CdTe; surface recombination velocity; temperature 202 K to 295 K; temperature 293 K to 298 K; temperature dependence; two-photon excitation time-resolved photoluminescence; Crystals; Excitons; Measurement by laser beam; Photovoltaic systems; Surface treatment; Temperature measurement; Cadmium compounds; charge-carrier lifetime; photoluminescence (PL); photovoltaic cells;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2014.2359738

Filename

6917003