Title :
Investigation of InGaN p-i-n Homojunction and Heterojunction Solar Cells
Author :
Cai, Xiaomei ; Wang, Yu ; Chen, Bihua ; Liang, Ming-Ming ; Liu, Wen-Jie ; Zhang, Jiang-Yong ; Lv, Xue-Qin ; Ying, Lei-Ying ; Zhang, Bao-Ping
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen, China
Abstract :
InGaN p-i-n homojunction (HOJ) and heterojunction (HEJ) solar cells (SCs) with similar width of depletion region are investigated. Through comparison of both the material property and device performance, it is demonstrated that HEJ exhibits much better results than HOJ, indicating that HEJ is preferred for fabrication of InGaN SCs. Some suggestions are proposed for the development of InGaN SCs in the future.
Keywords :
III-V semiconductors; indium compounds; solar cells; wide band gap semiconductors; InGaN; depletion region; heterojunction solar cells; pin homojunction solar cells; Absorption; Doping; Gallium nitride; Materials; PIN photodiodes; Photovoltaic cells; Surface morphology; Heterojunction (HEJ); InGaN; homojunction (HOJ); p-i-n; solar cells (SCs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2227702
