DocumentCode
1761878
Title
Investigation of InGaN p-i-n Homojunction and Heterojunction Solar Cells
Author
Cai, Xiaomei ; Wang, Yu ; Chen, Bihua ; Liang, Ming-Ming ; Liu, Wen-Jie ; Zhang, Jiang-Yong ; Lv, Xue-Qin ; Ying, Lei-Ying ; Zhang, Bao-Ping
Author_Institution
Dept. of Phys., Xiamen Univ., Xiamen, China
Volume
25
Issue
1
fYear
2013
fDate
Jan.1, 2013
Firstpage
59
Lastpage
62
Abstract
InGaN p-i-n homojunction (HOJ) and heterojunction (HEJ) solar cells (SCs) with similar width of depletion region are investigated. Through comparison of both the material property and device performance, it is demonstrated that HEJ exhibits much better results than HOJ, indicating that HEJ is preferred for fabrication of InGaN SCs. Some suggestions are proposed for the development of InGaN SCs in the future.
Keywords
III-V semiconductors; indium compounds; solar cells; wide band gap semiconductors; InGaN; depletion region; heterojunction solar cells; pin homojunction solar cells; Absorption; Doping; Gallium nitride; Materials; PIN photodiodes; Photovoltaic cells; Surface morphology; Heterojunction (HEJ); InGaN; homojunction (HOJ); p-i-n; solar cells (SCs);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2012.2227702
Filename
6387322
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