Title :
Modified Interface State Charge Model for 4H-SiC Power MOSFETs
Author :
Hisamoto, Digh ; Yoshimoto, Hiroyuki ; Tega, Naoki
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Abstract :
We propose a modified model for interface-state charges to comprehend the device characteristics of 4H-SiC MOSFETs. Device characteristics, such as channel current and channel capacitance, and their dependence on temperature were intuitionally expected by regarding interface-state charges at the conduction band edge as stagnation. We also found that the observed mobility was underestimated through conventional experimental methods compared with actual channel mobility due to stagnant carriers.
Keywords :
interface states; power MOSFET; silicon compounds; channel capacitance; channel current; channel mobility; conduction band edge; device characteristics; modified interface state charge model; power MOSFET; stagnant carriers; Capacitance; Interface states; Logic gates; Semiconductor device modeling; Silicon carbide; Temperature dependence; 4H-SiC; Silicon Carbide; Silicon carbide; interface state; power MOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2411751
