DocumentCode
1761880
Title
Modified Interface State Charge Model for 4H-SiC Power MOSFETs
Author
Hisamoto, Digh ; Yoshimoto, Hiroyuki ; Tega, Naoki
Author_Institution
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Volume
36
Issue
5
fYear
2015
fDate
42125
Firstpage
490
Lastpage
492
Abstract
We propose a modified model for interface-state charges to comprehend the device characteristics of 4H-SiC MOSFETs. Device characteristics, such as channel current and channel capacitance, and their dependence on temperature were intuitionally expected by regarding interface-state charges at the conduction band edge as stagnation. We also found that the observed mobility was underestimated through conventional experimental methods compared with actual channel mobility due to stagnant carriers.
Keywords
interface states; power MOSFET; silicon compounds; channel capacitance; channel current; channel mobility; conduction band edge; device characteristics; modified interface state charge model; power MOSFET; stagnant carriers; Capacitance; Interface states; Logic gates; Semiconductor device modeling; Silicon carbide; Temperature dependence; 4H-SiC; Silicon Carbide; Silicon carbide; interface state; power MOSFETs;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2411751
Filename
7058425
Link To Document