DocumentCode :
1761926
Title :
Capacitive-Piezoelectric Transducers for High- Q Micromechanical AlN Resonators
Author :
Li-Wen Hung ; Nguyen, Clark T.-C
Author_Institution :
Dept. of Electr. & Eng. Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Volume :
24
Issue :
2
fYear :
2015
fDate :
42095
Firstpage :
458
Lastpage :
473
Abstract :
A capacitive-piezoelectric (also known as, capacitive-piezo) transducer that combines the strengths of capacitive and piezoelectric mechanisms to achieve a combination of electromechanical coupling and Q higher than otherwise attainable by either mechanism separately, has allowed demonstration of a 1.2-GHz contour-mode aluminum nitride (AlN) ring resonator with Q > 3000 on par with the highest measured d31-transduced AlN-only piezoelectric resonators past 1 GHz, and a 50-MHz disk array with an even higher Q > 12 000. Here, the key innovation is to separate the piezoelectric resonator from its metal electrodes by tiny gaps to eliminate metal material and metal-to-piezoelectric interface losses thought to limit thin-film piezoelectric resonator Q, while also maintaining high electric field strength to preserve a strong piezoelectric effect. While Q increases, electromechanical coupling decreases, but the keff2 · Q product can still increase overall. More importantly, use of the capacitive-piezo transducer allows a designer to trade electromechanical coupling for Q, providing a very useful method to tailor Q and coupling for narrowband radio frequency (RF) channel-selecting filters for which Q trumps coupling. This capacitive-piezo transducer concept does not require dc-bias voltages and allows for much thicker electrodes that reduce series resistance without mass loading the resonant structure. The latter is especially important as resonators and their supports continue to scale toward even higher frequencies. [2013-0395].
Keywords :
III-V semiconductors; Q-factor; aluminium compounds; capacitive transducers; crystal resonators; micromechanical resonators; piezoelectric transducers; wide band gap semiconductors; AlN; capacitive-piezoelectric transducers; capacitive-piezotransducer; contour-mode aluminum nitride ring resonator; disk array; electromechanical coupling; frequency 1.2 GHz; frequency 50 MHz; high-Q micromechanical aluminum nitride resonators; narrowband radio frequency channel-selecting filters; series resistance; thin-film piezoelectric resonator; Couplings; Electrodes; III-V semiconductor materials; Metals; Resonant frequency; Transducers; Micromechanical resonator; aluminum nitride; aluminum nitride.; electromechanical coupling; equivalent circuit; filter; oscillator; quality factor; self-alignment; small gap;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2014.2332991
Filename :
6857352
Link To Document :
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