Title :
Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment
Author :
Yun-Gun Lee ; Gi-Seok Heo ; Hong-Gyu Park ; Hae-Chang Jeong ; Ju Hwan Lee ; Dae-Shik Seo
Author_Institution :
Dept. of Electr. & Eng., Yonsei Univ., Seoul, South Korea
Abstract :
This letter demonstrates liquid crystal (LC) alignment on solution-derived Zn-doped GaO (ZnGaO) films using an ion beam (IB) method. Homogeneous and uniform LC alignment was achieved on IB-irradiated ZnGaO films. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of the IB-irradiated ZnGaO surfaces to verify the compositional behavior for LC alignment. In addition, ZnGaO films with twisted nematic cells exhibited electro-optical characteristics comparable with those of a conventional polyimide layer for potential LC display applications.
Keywords :
III-VI semiconductors; X-ray photoelectron spectra; bonds (chemical); electro-optical effects; gallium compounds; ion beam effects; liquid crystal displays; liquid phase deposition; molecular orientation; nematic liquid crystals; semiconductor growth; semiconductor thin films; zinc compounds; X-ray photoelectron spectroscopy; XPS; ZnGaO; alignment layers; chemical bonding states; compositional behavior; electrooptical characteristics; homogeneous liquid crystal alignment; ion beam-irradiated ZnGaO films; ion beam-irradiated ZnGaO surfaces; ion-beam bombardment; solution-derived Zn-doped GaO films; twisted nematic cells; twisted-nematic liquid crystal displays; uniform liquid crystal alignment; Films; Ion beams; Liquid crystal displays; Liquid crystals; Radiation effects; Surface morphology; Voltage measurement; Electro-optical characteristics; ZnGaO; electro-optical characteristics; ion beam irradiation; liquid crystal alignment; solution process;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2445312
