DocumentCode :
1762211
Title :
A Time-of-Flight 3-D Image Sensor With Concentric-Photogates Demodulation Pixels
Author :
Tae-Yon Lee ; Yong-Jei Lee ; Dong-Ki Min ; Seung-Hoon Lee ; Wang-Hyun Kim ; Jung-Kyu Jung ; Ovsiannikov, Ilia ; Young-Gu Jin ; Yoondong Park ; Fossum, Eric R.
Author_Institution :
Semicond. R&DCenter, Samsung Electron., Hwasung, South Korea
Volume :
61
Issue :
3
fYear :
2014
fDate :
41699
Firstpage :
870
Lastpage :
877
Abstract :
In this paper, we develop pixels with concentric-photogates for applications in time-of-flight 3-D image sensors with single-tap architecture. The pixel uses a buried-channel device and features a reduced effective electron transit length, for the rapid transfer of a signal electron. A reduction in the interpixel irregularity of signal levels and a consequent increase in the demodulation signal amplitude are observed in the single-tap operation mode as opposed to the multitap operation mode. Specifically, we are able to achieve a demodulation contrast higher than 50% from 20 MHz modulation of an 850 nm light-emitting diode illumination. Finally, we construct a sensor composed of 198 × 108 concentric photogate pixels, each with a pitch of 28 μm, and use it to generate a 3-D image conveying gross distance information and detailed object features with a distance error of less than 1% over a range of 1 to 7 m.
Keywords :
CMOS image sensors; demodulation; light emitting diodes; 3D CMOS image sensor; buried channel device; concentric photogate demodulation pixel; demodulation contrast; demodulation signal amplitude; distance error; effective electron transit length reduction; frequency 20 MHz; gross distance information; interpixel irregularity reduction; light emitting diode illumination; multitap operation mode; rapid signal electron transfer; single tap architecture; time of flight; wavelength 28 mum; wavelength 850 nm; Arrays; Demodulation; Image sensors; Light emitting diodes; Logic gates; Signal to noise ratio; 3-D; CMOS; image sensor; phase-shift demodulation; photogate; time-of-flight (ToF);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2301875
Filename :
6737225
Link To Document :
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