DocumentCode :
1762227
Title :
Sheer power
Author :
Hosoda, T. ; Liang, Robert ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.
Volume :
49
Issue :
10
fYear :
2013
fDate :
May 9 2013
Firstpage :
632
Lastpage :
632
Abstract :
Researchers at the State University of New York have used inductively coupled plasma (ICP) reactive ion etching (RIE) to manufacture a ridge waveguide based diode laser. The result was record-breaking 37 mW continuous-wave operation at room temperature for micrometre wavelengths. In the work presented in this issue of Electronics Letters, the etching was, said Hosoda, “stopped in AlGaAsSb cladding layer to minimise internal optical loss due to overlap of optical field with metal layers, which was not possible with wet etching techniques.”
Keywords :
ridge waveguides; semiconductor lasers; sputter etching; waveguide lasers; State University of New York; continuous-wave operation; inductively coupled plasma; micrometre wavelengths; power 37 mW; reactive ion etching; ridge waveguide based diode laser; sheer power;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.1435
Filename :
6528794
Link To Document :
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