DocumentCode :
1762329
Title :
A High-Efficiency MOSFET Transformerless Inverter for Nonisolated Microinverter Applications
Author :
Baifeng Chen ; Bin Gu ; Lanhua Zhang ; Zahid, Zaka Ullah ; Lai, Jih-Sheng Jason ; Zhiling Liao ; Ruixiang Hao
Author_Institution :
Future Energy Electron. Center, Virginia Tech, Blacksburg, VA, USA
Volume :
30
Issue :
7
fYear :
2015
fDate :
42186
Firstpage :
3610
Lastpage :
3622
Abstract :
State-of-the-art low-power-level metal-oxide-semiconductor field-effect transistor (MOSFET)-based transformerless photovoltaic (PV) inverters can achieve high efficiency by using latest super junction MOSFETs. However, these MOSFET-based inverter topologies suffer from one or more of these drawbacks: MOSFET failure risk from body diode reverse recovery, increased conduction losses due to more devices, or low magnetics utilization. By splitting the conventional MOSFET-based phase leg with an optimized inductor, this paper proposes a novel MOSFET-based phase leg configuration to minimize these drawbacks. Based on the proposed phase leg configuration, a high efficiency single-phase MOSFET transformerless inverter is presented for the PV microinverter applications. The pulsewidth modulation (PWM) modulation and circuit operation principle are then described. The common-mode and differential-mode voltage model is then presented and analyzed for circuit design. Experimental results of a 250 W hardware prototype are shown to demonstrate the merits of the proposed transformerless inverter on nonisolated two-stage PV microinverter application.
Keywords :
MOSFET circuits; PWM invertors; failure analysis; inductors; losses; photovoltaic power systems; risk analysis; MOSFET failure risk; MOSFET-based inverter topology; MOSFET-based phase leg configuration; PWM; body diode reverse recovery; circuit design; circuit operation principle; common mode voltage model; conduction loss; differential mode voltage model; hardware prototype; high efficiency MOSFET transformerless photovoltaic inverter; inductor optimization; magnetics utilization; metal oxide semiconductor field effect transistor; power 250 W; pulsewidth modulation; super junction MOSFET; Inductors; Inverters; MOSFET; Magnetics; Power transformer insulation; Pulse width modulation; Topology; MOSFET inverters; Microinverter; photovoltaic (PV) inverter; transformerless inverter;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2014.2339320
Filename :
6857392
Link To Document :
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