1.9 μm hybrid silicon/iii-v semiconductor laser

Author

Dong, P. ; Hu, T.-C. ; Zhang, Leiqi ; Dinu, M. ; Kopf, R. ; Tate, A. ; Buhl, Larry ; Neilson, David T. ; Luo, Xiaohua ; Liow, Tsung-Yang ; Lo, Guo-Qiang ; Chen, Yen-Kuang

Author_Institution

Bell Labs., Alcatel-Lucent, Holmdel, NJ, USA

Volume

49

Issue

10

fYear

2013

fDate

May 9 2013

Firstpage

664

Lastpage

666

Abstract

A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.

Keywords

III-V semiconductors; compensation; elemental semiconductors; gallium arsenide; indium compounds; laser transitions; quantum well lasers; silicon; silicon-on-insulator; wafer bonding; waveguide lasers; InGaAs-Si; InP; Si; current 45 mA; current 95 mA; hybrid silicon-III-V semiconductor laser; multiple quantum wells; processed silicon waveguides; silicon-on-insulator wafer; strain compensation; temperature 293 K to 298 K; temperature 5 degC; threshold current; transition tapers; wafer bonding technique; wavelength 1.9 mum;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.0674

Filename

6528813