• DocumentCode
    1762409
  • Title

    Considerations on the  {{ 4 {{NT}}_{\\rm o} }/{ {T}_{\\rm m}}} Ratio and the Noise Correlation Matrix of Active and Passive Two-Port Networks

  • Author

    Boglione, Luciano

  • Author_Institution
    Electron. Sci. & Technol. Div., U.S. Naval Res. Lab., Washington, DC, USA
  • Volume
    61
  • Issue
    12
  • fYear
    2013
  • fDate
    Dec. 2013
  • Firstpage
    4145
  • Lastpage
    4153
  • Abstract
    The constraint on the Wiatr-Pospieszalski (WP) parameter ΘWP = 4 NTo/Tm ≤ 2, where N is the Lange invariant and Tm the minimum equivalent noise temperature and To=290 ( K ), has been suggested as a validation tool for the characterization of active microwave devices, despite its acknowledged limitations. This paper provides a solid theoretical background on ΘWP that is used to investigate noisy linear two-port networks. In particular, parallel feedback is discussed thoroughly in order to understand its effect on the ΘWP parameter and determine the conditions for which ΘWP is larger or smaller than 2. A suitable expression that explains the conditions for ΘWP of on-chip devices to be less than 2 is obtained. The theoretical results are supported by a scalable GaN device model extracted from measurements providing further insight into the noise performance of microwave devices. Finally, the investigation is applied to passive two-port networks to highlight the singular properties of ΘWP=2. The broad result of this paper´s investigation is that the constraint ΘWP=2 is not a property of the noise parameter matrix as the constraint 1≤ ΘWP is; yet, the threshold ΘWP=2 is demonstrated to have unique features for both active and passive two-port networks. Alternative and original demonstrations of the 1≤ ΘWP constraint are also obtained as a byproduct of the investigation.
  • Keywords
    III-V semiconductors; active networks; circuit noise; gallium compounds; microwave devices; passive networks; two-port networks; wide band gap semiconductors; GaN; Lange invariant; WP parameter; Wiatr-Pospieszalski parameter; active microwave device; active two port network; minimum equivalent noise temperature; noise correlation matrix; noise parameter matrix; noisy linear two-port network; on chip device; passive two port network; scalable device model; temperature 290 K; validation tool; Admittance; Capacitors; Correlation; Gallium nitride; Microwave devices; Noise; Noise measurement; Circuit theory; noise analysis; noise in circuits and devices; noise measurements; noise modeling;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2013.2287859
  • Filename
    6668990